NPN bipolar junction transistor (BJT) for through-hole mounting. Features a 400V collector-emitter voltage, 0.3A continuous collector current, and 600V collector-base voltage. Housed in a 3-pin TO-92 plastic package with formed leads, offering a maximum power dissipation of 900mW. Operates across a temperature range of -55°C to 150°C, with a minimum DC current gain of 100.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSC966CT A3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
4.7(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max)
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
600V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
900mW
Material
Si
Minimum DC Current Gain
100@1mA@5V|100@20mA@5V
Maximum Transition Frequency
50(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Taiwan Semiconductor TSC966CT A3 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSC966CT A3 to view detailed technical specifications.
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