NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 0.3A, with a maximum power dissipation of 1000mW. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads. Offers a minimum DC current gain of 100 at 1mA/5V and a minimum transition frequency of 50MHz. Operates across a temperature range of -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Taiwan Semiconductor TSC966CW RPG technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-223
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.85(Max)
Package Width (mm)
3.75(Max)
Package Height (mm)
1.8(Max)
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.35(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
600V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
0.3A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
100@1mA@5V|90@20mA@5V
Maximum Transition Frequency
50(Min)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Taiwan Semiconductor TSC966CW RPG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSC966CW RPG to view detailed technical specifications.
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