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Technical Specifications
Taiwan Semiconductor TSM1N60LCP technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
1A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
12R
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
600V
Fall Time
24ns
Gate to Source Voltage (Vgs)
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Nominal Vgs
4V
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
18ns
Width
6.8mm
Compliance
RoHS
Not Compliant
Datasheet
Taiwan Semiconductor TSM1N60LCP Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM1N60LCP to view detailed technical specifications.
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