N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 1A continuous drain current. This single-element transistor is housed in a 4-pin SOT-223 (TO-261AA) surface-mount package with gull-wing leads. Key specifications include a maximum gate-source voltage of ±30V, a typical gate charge of 6.1nC, and a maximum power dissipation of 2100mW. The plastic package measures 6.85mm x 3.75mm x 1.8mm.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Taiwan Semiconductor TSM1NB60CW RPG technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.85(Max) |
| Package Width (mm) | 3.75(Max) |
| Package Height (mm) | 1.8(Max) |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.35(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 1A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 10000@10VmOhm |
| Typical Gate Charge @ Vgs | 6.1@10VnC |
| Typical Gate Charge @ 10V | 6.1nC |
| Typical Input Capacitance @ Vds | 138@25VpF |
| Maximum Power Dissipation | 2100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM1NB60CW RPG Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM1NB60CW RPG to view detailed technical specifications.
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