N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 0.5A continuous drain current. This single element transistor is housed in a 3-pin TO-92 plastic package with formed leads for through-hole mounting. Key specifications include a ±30V gate-source voltage, 4.5V gate threshold voltage, and 10000 mOhm drain-source resistance at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2500mW.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM1NB60SCT A3G technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
4.7(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max)
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
0.5A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
10000@10VmOhm
Typical Gate Charge @ Vgs
6.1@10VnC
Typical Gate Charge @ 10V
6.1nC
Typical Input Capacitance @ Vds
138@25VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Taiwan Semiconductor TSM1NB60SCT A3G Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM1NB60SCT A3G to view detailed technical specifications.
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