Taiwan Semiconductor
TSM2313CX
TAIWAN SEMICONDUCTOR TSM2313CX MOSFET Transistor, P Channel, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
PackageSOT-23
PolarityP-CHANNEL
Power2W
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Technical Specifications
Taiwan Semiconductor TSM2313CX technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -3.3A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | -600mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM2313CX Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2313CX to view detailed technical specifications.
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