Taiwan Semiconductor
TSM2323CX
TAIWAN SEMICONDUCTOR TSM2323CX MOSFET Transistor, P Channel, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
PackageSOT-23
Resistance0.031R
PolarityP-CHANNEL
Power1.25W
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Technical Specifications
Taiwan Semiconductor TSM2323CX technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -4.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 43ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Nominal Vgs | -400mV |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Reach SVHC Compliant | No |
| Resistance | 0.031R |
| RoHS Compliant | Yes |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 71ns |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM2323CX Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2323CX to view detailed technical specifications.
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