Taiwan Semiconductor
TSM2N7000CT
MOSFET, N, 60V, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds:...
PackageTO-92-3
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Taiwan Semiconductor TSM2N7000CT technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.3R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Package Quantity | 2000 |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Threshold Voltage | 3V |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM2N7000CT Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2N7000CT to view detailed technical specifications.
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