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Technical Specifications
Taiwan Semiconductor TSM2N7002KDCU6 technical specifications.
General
| Package/Case | SOT-363 |
| Clamping Voltage | 70.1V |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 1.4V |
| Input Capacitance | 30pF |
| Max Breakdown Voltage | 9.8V |
| Min Breakdown Voltage | 25.4V |
| Max Forward Surge Current (Ifsm) | 2.5A |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Max Reverse Leakage Current | 1uA |
| Number of Channels | 2 |
| Peak Pulse Current | 21.4A |
| Peak Pulse Power | 1.5kW |
| Power Dissipation | 200mW |
| Reverse Recovery Time | 50ns |
| Reverse Standoff Voltage | 24V |
| Zener Voltage | 75V |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TSM2N7002KDCU6 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2N7002KDCU6 to view detailed technical specifications.
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