N-channel enhancement mode power MOSFET in an ITO-220 package, featuring a 600V drain-source voltage and 2A continuous drain current. This single-element transistor offers a maximum power dissipation of 25W and a low on-resistance of 4400mΩ at 10V gate-source voltage. With a 3-pin configuration and through-hole mounting, it operates across a wide temperature range from -55°C to 150°C.
PackageITO-220
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM2NB60CI C0 technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | ITO-220 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.6 |
| Package Height (mm) | 15 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 4400@10VmOhm |
| Typical Gate Charge @ Vgs | 9.4@10VnC |
| Typical Gate Charge @ 10V | 9.4nC |
| Typical Input Capacitance @ Vds | 249@25VpF |
| Maximum Power Dissipation | 25000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM2NB60CI C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM2NB60CI C0 to view detailed technical specifications.
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