N-channel enhancement mode power MOSFET designed for through-hole mounting. Features a 500V drain-source voltage rating and a continuous drain current of 9A. Housed in a TO-220 package with 3 pins and a tab, this single-element transistor offers a maximum power dissipation of 125W. Key specifications include a maximum gate-source voltage of ±30V and a low drain-source on-resistance of 850mΩ at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
Quick Jump:
Technical Specifications
Taiwan Semiconductor TSM9N50CZ C0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 9A |
| Maximum Drain Source Resistance | 850@10VmOhm |
| Typical Gate Charge @ Vgs | 63@10VnC |
| Typical Gate Charge @ 10V | 63nC |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM9N50CZ C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM9N50CZ C0 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.