N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 9A continuous drain current. This single-element transistor is housed in a 3-pin TO-220 through-hole package with a tab, offering a maximum power dissipation of 290W. Key specifications include a 4V gate threshold voltage and 1400mOhm drain-source resistance at 10V. Operating temperature range is -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSM9N90CZ C0 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.5(Max) |
| Package Width (mm) | 4.82(Max) |
| Package Height (mm) | 9.38(Max) |
| Seated Plane Height (mm) | 22.86(Max) |
| Pin Pitch (mm) | 2.71(Max) |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 9A |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 1400@10VmOhm |
| Typical Gate Charge @ Vgs | 65@10VnC |
| Typical Gate Charge @ 10V | 65nC |
| Typical Input Capacitance @ Vds | 2324@25VpF |
| Maximum Power Dissipation | 290000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor TSM9N90CZ C0 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSM9N90CZ C0 to view detailed technical specifications.
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