N-channel NexFET™ power MOSFET featuring 12-V drain-source voltage and 44 mΩ on-resistance. This single-element JFET is housed in a 3-terminal LGA package with bottom terminal position and dimensions of 1 mm x 0.6 mm. Includes gate ESD protection.
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Technical Specifications
Texas Instruments CSD13383F4 technical specifications.
General
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Texas Instruments CSD13383F4 Datasheet
Download the complete datasheet for Texas Instruments CSD13383F4 to view detailed technical specifications.
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