Single N-channel NexFET™ power MOSFET featuring 12-V drain-source voltage and 19 mΩ on-resistance. This discrete semiconductor component offers gate ESD protection and is housed in a compact 0.8 mm x 1.5 mm LGA package with bottom terminal positioning. It comprises a single element and operates within a temperature range of -55°C to 150°C.
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Technical Specifications
Texas Instruments CSD13385F5 technical specifications.
General
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Texas Instruments CSD13385F5 Datasheet
Download the complete datasheet for Texas Instruments CSD13385F5 to view detailed technical specifications.
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