N-channel NexFET™ MOSFET, single element, 25V drain-to-source voltage. Features 23mΩ drain-to-source resistance at 10V gate-to-source voltage, 5A continuous drain current, and 2.3W power dissipation. Packaged in a 2x2mm SON surface-mount package with tin, matte contact plating. Operates from -55°C to 150°C, with typical turn-on delay of 2.7ns and fall time of 1.7ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Texas Instruments CSD16301Q2 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
25V
Element Configuration
Single
Fall Time
1.7ns
Gate to Source Voltage (Vgs)
10V
Height
0.8mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Nominal Vgs
1.2V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.3W
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
750um
Threshold Voltage
1.2V
Turn-Off Delay Time
4.1ns
Turn-On Delay Time
2.7ns
Width
2mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16301Q2 Datasheet
Download the complete datasheet for Texas Instruments CSD16301Q2 to view detailed technical specifications.
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