N-channel NexFET™ MOSFET, single element, 25V drain-to-source voltage. Features 23mΩ drain-to-source resistance at 10V gate-to-source voltage, 5A continuous drain current, and 2.3W power dissipation. Packaged in a 2x2mm SON surface-mount package with tin, matte contact plating. Operates from -55°C to 150°C, with typical turn-on delay of 2.7ns and fall time of 1.7ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Texas Instruments CSD16301Q2 technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 1.7ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.8mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 750um |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 4.1ns |
| Turn-On Delay Time | 2.7ns |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD16301Q2 Datasheet
Download the complete datasheet for Texas Instruments CSD16301Q2 to view detailed technical specifications.
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