N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 31A continuous drain current, and 2.4mOhm maximum drain-source resistance at 8V. NexFET process technology, single quad drain triple source element, with a typical gate charge of 14nC at 4.5V. Operates from -55°C to 150°C with 3100mW maximum power dissipation.
PackageVSON-CLIP EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD16321Q5C technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | VSON-CLIP EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1.05(Max) |
| Pin Pitch (mm) | 1.27 |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 25V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 31A |
| Maximum Gate Threshold Voltage | 1.4V |
| Maximum Drain Source Resistance | 2.4@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | [email protected]pF |
| Maximum Power Dissipation | 3100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Texas Instruments CSD16321Q5C Datasheet
Download the complete datasheet for Texas Instruments CSD16321Q5C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.