N-channel NexFET™ MOSFET with 25V drain-source voltage and 2.1mΩ drain-to-source resistance. Features a single SON5x6 package for surface mounting, offering 100A continuous drain current. Operates across a wide temperature range of -55°C to 150°C with a 3.1W power dissipation. Includes fast switching characteristics with a 12ns fall time and 10.5ns turn-on delay.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16325Q5 technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
100A
Drain to Source Resistance
2.1mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
4nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.1V
Turn-Off Delay Time
32ns
Turn-On Delay Time
10.5ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16325Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16325Q5 to view detailed technical specifications.
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