N-channel NexFET™ MOSFET with 25V drain-source voltage and 2.1mΩ drain-to-source resistance. Features a single SON5x6 package for surface mounting, offering 100A continuous drain current. Operates across a wide temperature range of -55°C to 150°C with a 3.1W power dissipation. Includes fast switching characteristics with a 12ns fall time and 10.5ns turn-on delay.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16325Q5 technical specifications.
General
| Package/Case | SON |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.1mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD16325Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16325Q5 to view detailed technical specifications.
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