N-channel NexFET™ MOSFET, single element configuration, offering 25V drain-to-source breakdown voltage. Features 3.4mΩ drain-to-source resistance at 10V gate-to-source voltage, with a continuous drain current of 60A. This surface-mount device utilizes a 3x3mm SON package with tin contact plating, operating across a temperature range of -55°C to 150°C. Includes fast switching characteristics with a 5.3ns turn-on delay and 6.3ns fall time.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD16327Q3 technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
3.4mR
Drain to Source Voltage (Vdss)
25V
Element Configuration
Single
Fall Time
6.3ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
1.3nF
Lead Free
Contains Lead
Length
3.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
4mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.2V
Turn-Off Delay Time
13ns
Turn-On Delay Time
5.3ns
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16327Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16327Q3 to view detailed technical specifications.
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