N-channel NexFET™ power MOSFET featuring 25V drain-to-source voltage and 100A continuous drain current. Offers low 3.8mΩ drain-to-source resistance at 10V gate-to-source voltage. Surface-mount design in a 5mm x 6mm SON package with tin contact plating. Operating temperature range from -55°C to 150°C with 3W maximum power dissipation.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD16342Q5A technical specifications.
General
| Package/Case | VSON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 3.1ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 1.35nF |
| Lead Free | Contains Lead |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 4.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 850mV |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 5.2ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD16342Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16342Q5A to view detailed technical specifications.
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