N-channel NexFET™ power MOSFET featuring 25V drain-to-source voltage and 100A continuous drain current. Offers low 3.8mΩ drain-to-source resistance at 10V gate-to-source voltage. Surface-mount design in a 5mm x 6mm SON package with tin contact plating. Operating temperature range from -55°C to 150°C with 3W maximum power dissipation.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD16342Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Resistance
3.8mR
Drain to Source Voltage (Vdss)
25V
Element Configuration
Single
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
1.35nF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
4.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
850mV
Turn-Off Delay Time
13.4ns
Turn-On Delay Time
5.2ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16342Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16342Q5A to view detailed technical specifications.
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