N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.6mΩ Rds On Max at 1.5V Vgs. Features 100A continuous drain current, 3.1W power dissipation, and 12.7ns fall time. Packaged in a 5x6mm SON surface-mount package with tin, matte contact plating. Operating temperature range from -55°C to 150°C.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16401Q5 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
12.7ns
Gate to Source Voltage (Vgs)
16V
Height
1.05mm
Input Capacitance
4.1nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
1.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
16.6ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16401Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16401Q5 to view detailed technical specifications.
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