N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage. Features 3.7mOhm Rds On at 100A continuous drain current. Operates from -55°C to 150°C, with a 1.6V nominal gate-source voltage. Surface mountable in a SON5x6 package, 5.8mm x 5mm x 1.1mm, with tin matte contact plating. RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16403Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
16V
Height
1.1mm
Input Capacitance
2.66nF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
2.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.6V
Turn-Off Delay Time
15.2ns
Turn-On Delay Time
11.8ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16403Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16403Q5A to view detailed technical specifications.
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