N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 81A continuous drain current, and 4.1mΩ drain-source resistance. This surface-mount device features a 5x6 SON package with tin, matte contact plating, and a maximum power dissipation of 3W. Operating temperature range is -55°C to 150°C, with a nominal gate-source voltage of 1.8V. Turn-on delay is 7.8ns and turn-off delay is 8.4ns.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD16404Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
81A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
4.1mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
4.6ns
Gate to Source Voltage (Vgs)
16V
Height
1.1mm
Input Capacitance
1.22nF
Lead Free
Contains Lead
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
5.1mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Thickness
1mm
Threshold Voltage
1.8V
Turn-Off Delay Time
8.4ns
Turn-On Delay Time
7.8ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16404Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16404Q5A to view detailed technical specifications.
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