N-channel NexFET™ MOSFET, single element configuration, featuring 25V drain-to-source breakdown voltage and 5.9mΩ drain-to-source resistance at 10Vgs. This surface-mount device offers a continuous drain current of 60A and a maximum power dissipation of 2.7W. It operates within a temperature range of -55°C to 150°C and is packaged in a SON 3x3mm footprint. Key switching parameters include a 7.3ns turn-on delay and 8.5ns turn-off delay.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD16406Q3 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
5.9mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
4.8ns
Gate to Source Voltage (Vgs)
16V
Height
1.1mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
1.7V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.7W
Rds On Max
5.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Thickness
1mm
Threshold Voltage
1.7V
Turn-Off Delay Time
8.5ns
Turn-On Delay Time
7.3ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16406Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16406Q3 to view detailed technical specifications.
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