N-channel Power MOSFET featuring NexFET process technology. 25V drain-source voltage and 31A continuous drain current capability. Surface mountable in an 8-pin VSON-CLIP EP package with a 1.27mm pin pitch. Offers 2.4 mOhm maximum drain-source resistance at 10V. Operates across a wide temperature range from -55°C to 150°C.
PackageVSON-CLIP EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD16407Q5C technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
VSON-CLIP EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
1
Seated Plane Height (mm)
1.05(Max)
Pin Pitch (mm)
1.27
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
16V
Maximum Continuous Drain Current
31A
Maximum Drain Source Resistance
2.4@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
Maximum Power Dissipation
3100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD16407Q5C Datasheet
Download the complete datasheet for Texas Instruments CSD16407Q5C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.