N-channel Power MOSFET, NexFET technology, 25V drain-source voltage, 22A continuous drain current, and 4.5mOhm maximum drain-source resistance at 10V. Features a single Quad Drain Triple Source configuration in an 8-pin SON surface-mount package (5.1mm x 6.1mm x 1.05mm max). Typical gate charge is 6.7nC at 4.5V, with input capacitance of 990pF at 12.5V. Maximum power dissipation is 3100mW, operating from -55°C to 150°C.
PackageSON
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD16408Q5 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package/Case
SON
Package Description
Small Outline No Lead Package
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.1(Max)
Package Width (mm)
6.1(Max)
Package Height (mm)
1.05(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
16V
Maximum Continuous Drain Current
22A
Maximum Drain Source Resistance
4.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
Maximum Power Dissipation
3100mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD16408Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16408Q5 to view detailed technical specifications.
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