N-channel NexFET™ MOSFET, single element configuration, features 25V drain-to-source breakdown voltage and 60A continuous drain current. Surface mountable in a 3x3mm SON package with tin, matte contact plating, this component offers a low 8.2mΩ Rds On (Max). Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2.6W. Key switching characteristics include a 6.5ns turn-on delay and 3.4ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.6W
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Technical Specifications
Texas Instruments CSD16409Q3 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
16V
Height
1.1mm
Input Capacitance
800pF
Lead Free
Contains Lead
Length
3.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.6W
Mount
Surface Mount
Nominal Vgs
2V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.6W
Radiation Hardening
No
Rds On Max
8.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
6.3ns
Turn-On Delay Time
6.5ns
Width
3.4mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16409Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16409Q3 to view detailed technical specifications.
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