N-channel NexFET™ MOSFET, single element configuration, offering 25V drain-to-source breakdown voltage and 59A continuous drain current. Features low 8.5mΩ Rds On (max) and 12mΩ Rds On (typ) at 1.9V nominal gate-to-source voltage. This surface mount component, housed in a SON package with tin, matte contact plating, boasts a 3W power dissipation and operates across a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on delay of 6.2ns and fall time of 3.6ns. RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD16410Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
59A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
3.6ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
740pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.9V
Turn-Off Delay Time
6.5ns
Turn-On Delay Time
6.2ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16410Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16410Q5A to view detailed technical specifications.
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