Single N-channel NexFET™ power MOSFET featuring 25V drain-to-source breakdown voltage and 8mΩ drain-to-source resistance. Continuous drain current capability of 56A with a maximum power dissipation of 2.7W. Surface mountable in a 3mm x 3mm SON package with tin, matte contact plating. Operates across a wide temperature range of -55°C to 150°C.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD16411Q3 technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 25V |
| Dual Supply Voltage | 25V |
| Element Configuration | Single |
| Fall Time | 3.1ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 5.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD16411Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16411Q3 to view detailed technical specifications.
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