Single N-channel NexFET™ power MOSFET featuring 25V drain-to-source breakdown voltage and 8mΩ drain-to-source resistance. Continuous drain current capability of 56A with a maximum power dissipation of 2.7W. Surface mountable in a 3mm x 3mm SON package with tin, matte contact plating. Operates across a wide temperature range of -55°C to 150°C.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD16411Q3 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
56A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
570pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.7W
Radiation Hardening
No
Rds On Max
10mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
6ns
Turn-On Delay Time
5.3ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16411Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD16411Q3 to view detailed technical specifications.
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