N-channel NexFET™ MOSFET, single element configuration, featuring 25V drain-to-source breakdown voltage and 5.6mOhm typical Rds On at 10A. This surface-mount device offers a continuous drain current of 100A and a maximum power dissipation of 3.1W. With a fast fall time of 5.7ns and turn-on delay of 9.1ns, it operates across a wide temperature range of -55°C to 150°C. The SON package measures 5.8mm x 5mm x 1.1mm with tin, matte contact plating.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD16413Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
5.7ns
Gate to Source Voltage (Vgs)
16V
Height
1.1mm
Input Capacitance
1.78nF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
3.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.6V
Turn-Off Delay Time
10.7ns
Turn-On Delay Time
9.1ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16413Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD16413Q5A to view detailed technical specifications.
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