N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.9mΩ Rds On max. Features 100A continuous drain current, 3.2W power dissipation, and 1.6V nominal gate-source voltage. Operates from -55°C to 150°C, with a 5x6 SON package for surface mounting. Includes 11.1ns fall time and 15ns turn-on delay time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD16414Q5 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Dual Supply Voltage
25V
Element Configuration
Single
Fall Time
11.1ns
Gate to Source Voltage (Vgs)
16V
Height
1.05mm
Input Capacitance
3.65nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
1.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Termination
SMD/SMT
Threshold Voltage
1.6V
Turn-Off Delay Time
18.4ns
Turn-On Delay Time
15ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16414Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD16414Q5 to view detailed technical specifications.
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