N-channel NexFET™ MOSFET, single element, 25V drain-to-source breakdown voltage. Features 1.07mΩ maximum drain-to-source resistance at 100A continuous drain current. Operates with a gate-to-source voltage up to 20V, exhibiting a 1.4V threshold voltage. Surface mountable in a VSON package, with a maximum power dissipation of 3.2W and an operating temperature range of -55°C to 150°C.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD16556Q5B technical specifications.
General
Package/Case
VSON
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
1.2mR
Drain to Source Voltage (Vdss)
25V
Element Configuration
Single
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.18nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
1.07mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.4V
Turn-Off Delay Time
25ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD16556Q5B Datasheet
Download the complete datasheet for Texas Instruments CSD16556Q5B to view detailed technical specifications.
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