N-channel NexFET™ power MOSFET featuring 30V drain-to-source breakdown voltage and 7.3mΩ drain-to-source resistance at 10V gate-to-source voltage. This single MOSFET offers a continuous drain current of 87A and a maximum power dissipation of 3W. Designed for surface mounting in a 5mm x 6mm SON package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 5.2ns turn-on delay and a 3.1ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17302Q5A technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
87A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7.3mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
950pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
1.1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
7.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.2V
Turn-Off Delay Time
10.6ns
Turn-On Delay Time
5.2ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17302Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17302Q5A to view detailed technical specifications.
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