N-channel enhancement mode power MOSFET featuring NexFET process technology. 30V drain-source voltage and 32A continuous drain current capability. Surface-mount 8-pin SON package with a maximum power dissipation of 3200mW. Low drain-source on-resistance of 2.4mOhm at 8V gate-source voltage.
PackageSON
MountingSurface Mount
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Technical Specifications
Texas Instruments CSD17303Q5 technical specifications.
General
| Package Family Name | SON |
| Package/Case | SON |
| Package Description | Small Outline No Lead Package |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 6.1(Max) |
| Package Height (mm) | 1.05(Max) |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | NexFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 32A |
| Maximum Drain Source Resistance | 2.4@8VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2630@15VpF |
| Maximum Power Dissipation | 3200mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 01295 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Texas Instruments CSD17303Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17303Q5 to view detailed technical specifications.
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