N-channel enhancement mode power MOSFET featuring NexFET process technology. 30V drain-source voltage and 32A continuous drain current capability. Surface-mount 8-pin SON package with a maximum power dissipation of 3200mW. Low drain-source on-resistance of 2.4mOhm at 8V gate-source voltage.
PackageSON
MountingSurface Mount
Quick Jump:
Technical Specifications
Texas Instruments CSD17303Q5 technical specifications.
General
Package Family Name
SON
Package/Case
SON
Package Description
Small Outline No Lead Package
Pin Count
8
PCB
8
Package Length (mm)
5.1(Max)
Package Width (mm)
6.1(Max)
Package Height (mm)
1.05(Max)
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
NexFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
10V
Maximum Continuous Drain Current
32A
Maximum Drain Source Resistance
2.4@8VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2630@15VpF
Maximum Power Dissipation
3200mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
01295
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Texas Instruments CSD17303Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17303Q5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.