N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 6.9mΩ drain-to-source resistance at 10V gate-to-source voltage. This surface-mount device offers a continuous drain current of 56A and a maximum power dissipation of 2.7W. Packaged in a SON 3x3 with tin, matte contact plating, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 5.1ns turn-on delay and 3.1ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
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Technical Specifications
Texas Instruments CSD17304Q3 technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
56A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.9mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
955pF
Lead Free
Contains Lead
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
1.3V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.7W
Rds On Max
7.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.3V
Turn-Off Delay Time
10.4ns
Turn-On Delay Time
5.1ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17304Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD17304Q3 to view detailed technical specifications.
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