N-channel NexFET™ MOSFET, surface mountable in a SON package. Features 30V drain-to-source breakdown voltage and 3.6mOhm (typical) drain-to-source resistance at 10V gate-to-source voltage. Offers 100A continuous drain current and 3.1W power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times, including a 7.9ns fall time and 8.9ns turn-on delay.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD17305Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
7.9ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
2.6nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
3.4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
20ns
Turn-On Delay Time
8.9ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17305Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17305Q5A to view detailed technical specifications.
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