N-channel NexFET™ MOSFET, surface mountable in a SON package. Features 30V drain-to-source breakdown voltage and 3.6mOhm (typical) drain-to-source resistance at 10V gate-to-source voltage. Offers 100A continuous drain current and 3.1W power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times, including a 7.9ns fall time and 8.9ns turn-on delay.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD17305Q5A technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 7.9ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 2.6nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17305Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17305Q5A to view detailed technical specifications.
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