N-channel NexFET™ MOSFET, single element configuration, offering 30V drain-to-source breakdown voltage and 100A continuous drain current. Features low 3.3mΩ drain-to-source resistance at 10V gate-to-source voltage. Packaged in a SON5x6 surface-mount package with tin, matte contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17306Q5A technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 2.17nF |
| Lead Free | Contains Lead |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Nominal Vgs | 1.1V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 1mm |
| Threshold Voltage | 1.1V |
| Turn-Off Delay Time | 18.4ns |
| Turn-On Delay Time | 7.8ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17306Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17306Q5A to view detailed technical specifications.
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