N-channel NexFET™ MOSFET, single element configuration, offering 30V drain-to-source breakdown voltage and 100A continuous drain current. Features low 3.3mΩ drain-to-source resistance at 10V gate-to-source voltage. Packaged in a SON5x6 surface-mount package with tin, matte contact plating. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
Quick Jump:
Technical Specifications
Texas Instruments CSD17306Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
6.4ns
Gate to Source Voltage (Vgs)
10V
Height
1.1mm
Input Capacitance
2.17nF
Lead Free
Contains Lead
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Nominal Vgs
1.1V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
3.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.1V
Turn-Off Delay Time
18.4ns
Turn-On Delay Time
7.8ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17306Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17306Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
