N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source voltage and 32A continuous drain current. Offers low 1.8mΩ drain-to-source resistance at 10V gate-to-source voltage. Packaged in a SON5x6 surface-mount package with tin contact plating, this RoHS compliant component operates from -55°C to 150°C. Includes 12ns turn-on delay and 12ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17311Q5 technical specifications.
General
Package/Case
SON
Contact Plating
Tin
Continuous Drain Current (ID)
32A
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
4.28nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.2V
Turn-Off Delay Time
33ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17311Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17311Q5 to view detailed technical specifications.
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