N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source voltage and 32A continuous drain current. Offers low 1.8mΩ drain-to-source resistance at 10V gate-to-source voltage. Packaged in a SON5x6 surface-mount package with tin contact plating, this RoHS compliant component operates from -55°C to 150°C. Includes 12ns turn-on delay and 12ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17311Q5 technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Resistance | 1.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 4.28nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17311Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17311Q5 to view detailed technical specifications.
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