N-channel NexFET™ MOSFET, single element configuration, featuring 30V drain-to-source breakdown voltage and 1.7mOhm (typical) drain-to-source resistance at 4.5V gate-to-source voltage. This surface-mount component offers a continuous drain current of 100A and a maximum power dissipation of 3.2W. Packaged in a SON5x6 footprint with gold contact plating, it operates from -55°C to 150°C. Key switching characteristics include a 9.5ns turn-on delay and 23ns fall time.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17312Q5 technical specifications.
General
Package/Case
SON
Contact Plating
Gold
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
23ns
Gate to Source Voltage (Vgs)
4.5V
Height
1.05mm
Input Capacitance
5.24nF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Rds On Max
1.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
1mm
Threshold Voltage
1.1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
9.5ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17312Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17312Q5 to view detailed technical specifications.
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