N-channel MOSFET for surface mount applications, featuring 30V drain-source breakdown voltage and 5A continuous drain current. Offers low 32mΩ drain-source resistance at 10V gate-source voltage. Fast switching characteristics include a 1.3ns fall time and 2.8ns turn-on delay. Designed for operation between -55°C and 150°C with 2.3W maximum power dissipation.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power2.3W
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Technical Specifications
Texas Instruments CSD17313Q2Q1 technical specifications.
General
| Package/Case | SON |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 1.3ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100, NexFET™ |
| Threshold Voltage | 1.3V |
| Turn-Off Delay Time | 4.2ns |
| Turn-On Delay Time | 2.8ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17313Q2Q1 Datasheet
Download the complete datasheet for Texas Instruments CSD17313Q2Q1 to view detailed technical specifications.
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