30V N-Channel NexFET™ Power MOSFET in an 8-VSON package. Features 30V drain-to-source breakdown voltage, 4.1mΩ drain-to-source resistance, and 20A continuous drain current. Operates with a 20V gate-to-source voltage and a nominal Vgs of 1.5V. Offers fast switching with a 4.1ns fall time, 7ns turn-on delay, and 9ns turn-off delay. Maximum power dissipation is 3W, with operating temperatures from -55°C to 150°C. Surface mountable with tin, matte contact plating.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17510Q5A technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 1.25nF |
| Lead Free | Contains Lead |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 5.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Thickness | 1mm |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 7ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17510Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17510Q5A to view detailed technical specifications.
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