Texas Instruments
CSD17522Q5A
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm 8-VSONP -55 to 150
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17522Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin
Continuous Drain Current (ID)
87A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
30V
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
695pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
8.1mR
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
10.5ns
Turn-On Delay Time
6.7ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17522Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17522Q5A to view detailed technical specifications.
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