Texas Instruments
CSD17522Q5A
30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 8.1 mOhm 8-VSONP -55 to 150
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17522Q5A technical specifications.
General
| Package/Case | VSON |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 87A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 695pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 8.1mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 10.5ns |
| Turn-On Delay Time | 6.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17522Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17522Q5A to view detailed technical specifications.
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