N-Channel NexFET™ Power MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 6.1mΩ Drain to Source Resistance. Features a 1.5V Threshold Voltage, 3.6ns Fall Time, 7.6ns Turn-On Delay, and 12.2ns Turn-Off Delay. Surface mountable in a SON package with Tin, Matte contact plating. Operates from -55°C to 150°C with 3W Power Dissipation. RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17552Q5A technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.05nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 12.2ns |
| Turn-On Delay Time | 7.6ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17552Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17552Q5A to view detailed technical specifications.
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