N-Channel NexFET™ Power MOSFET, 30V Drain to Source Breakdown Voltage, 60A Continuous Drain Current, and 6.1mΩ Drain to Source Resistance. Features a 1.5V Threshold Voltage, 3.6ns Fall Time, 7.6ns Turn-On Delay, and 12.2ns Turn-Off Delay. Surface mountable in a SON package with Tin, Matte contact plating. Operates from -55°C to 150°C with 3W Power Dissipation. RoHS compliant.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Texas Instruments CSD17552Q5A technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.1mR
Drain to Source Voltage (Vdss)
30V
Fall Time
3.6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.05nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
6.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.5V
Turn-Off Delay Time
12.2ns
Turn-On Delay Time
7.6ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17552Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17552Q5A to view detailed technical specifications.
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