N-Channel NexFET™ Power MOSFET featuring 30V drain-to-source voltage and 100A continuous drain current. Offers low 3.5mΩ drain-to-source resistance and 3.1W power dissipation. Operates across a wide temperature range of -55°C to 150°C. Surface mountable in an 8-VSON package with dimensions of 5.8mm length, 5mm width, and 1.1mm height. Includes fast switching characteristics with a 9.7ns turn-on delay and 5.2ns fall time.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD17553Q5A technical specifications.
General
| Package/Case | VSON |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 3.252nF |
| Lead Free | Contains Lead |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 3.1mR |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Turn-Off Delay Time | 14.8ns |
| Turn-On Delay Time | 9.7ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17553Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD17553Q5A to view detailed technical specifications.
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