Single N-channel NexFET™ MOSFET with 30V drain-source breakdown voltage and 1.5mΩ Rds(on). Features 100A continuous drain current, 1.4V threshold voltage, and 9.2nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W. Surface mountable in a SON package, this component offers fast switching with turn-on delay of 20ns and fall time of 14ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17559Q5 technical specifications.
General
Package/Case
SON
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
1.5mR
Drain to Source Voltage (Vdss)
30V
Element Configuration
Single
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
9.2nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
1.15mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.4V
Turn-Off Delay Time
32ns
Turn-On Delay Time
20ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD17559Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17559Q5 to view detailed technical specifications.
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