Single N-channel NexFET™ MOSFET with 30V drain-source breakdown voltage and 1.5mΩ Rds(on). Features 100A continuous drain current, 1.4V threshold voltage, and 9.2nF input capacitance. Operates from -55°C to 150°C with a maximum power dissipation of 3.2W. Surface mountable in a SON package, this component offers fast switching with turn-on delay of 20ns and fall time of 14ns.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD17559Q5 technical specifications.
General
| Package/Case | SON |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.05mm |
| Input Capacitance | 9.2nF |
| Lead Free | Contains Lead |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Radiation Hardening | No |
| Rds On Max | 1.15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 20ns |
| Width | 5.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD17559Q5 Datasheet
Download the complete datasheet for Texas Instruments CSD17559Q5 to view detailed technical specifications.
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