N-channel NexFET™ MOSFET, single element configuration, offers 40V drain-to-source breakdown voltage and 3.2mΩ Rds On (max). This surface-mount component features a 100A continuous drain current and a 1.8V threshold voltage. Operating from -55°C to 150°C, it boasts a 150W maximum power dissipation and a 3.4ns fall time. Packaged in a SON5x6 VSON case with tin, matte contact plating, it is RoHS compliant.
PackageVSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Texas Instruments CSD18501Q5A technical specifications.
General
Package/Case
VSON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
3.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
3.84nF
Length
5.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Rds On Max
3.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.8V
Turn-Off Delay Time
20ns
Turn-On Delay Time
4.7ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18501Q5A Datasheet
Download the complete datasheet for Texas Instruments CSD18501Q5A to view detailed technical specifications.
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