
N-channel NexFET™ MOSFET, single element configuration, offers 40V drain-to-source breakdown voltage and 3.2mΩ Rds On (max). This surface-mount component features a 100A continuous drain current and a 1.8V threshold voltage. Operating from -55°C to 150°C, it boasts a 150W maximum power dissipation and a 3.4ns fall time. Packaged in a SON5x6 VSON case with tin, matte contact plating, it is RoHS compliant.
Texas Instruments CSD18501Q5A technical specifications.
| Package/Case | VSON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 3.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 3.84nF |
| Length | 5.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 4.7ns |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Texas Instruments CSD18501Q5A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
