Single N-channel NexFET™ MOSFET with 40V drain-to-source breakdown voltage and 2.3mΩ maximum drain-to-source resistance. Features 100A continuous drain current, 5.3ns turn-on delay, and 4ns fall time. Surface mountable in a SON package with tin, matte contact plating. Operates from -55°C to 150°C with a 1.8V threshold voltage.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD18502Q5B technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2.5mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
4ns
Gate to Source Voltage (Vgs)
20V
Height
1.05mm
Input Capacitance
5.07nF
Lead Free
Contains Lead
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Radiation Hardening
No
Rds On Max
2.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Thickness
950um
Threshold Voltage
1.8V
Turn-Off Delay Time
23ns
Turn-On Delay Time
5.3ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18502Q5B Datasheet
Download the complete datasheet for Texas Instruments CSD18502Q5B to view detailed technical specifications.
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