Single N-channel NexFET™ MOSFET in a TO-220 package, featuring a 40V drain-to-source breakdown voltage and a low 4.5mΩ maximum Rds(on) at 100A continuous drain current. This component offers a maximum power dissipation of 143W and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 5.7ns turn-on delay and a 6.8ns fall time. The through-hole mount design with tin, matte contact plating ensures reliable connections.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power143W
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Technical Specifications
Texas Instruments CSD18503KCS technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
5.4mR
Drain to Source Voltage (Vdss)
40V
Element Configuration
Single
Fall Time
6.8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.15nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
143W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
143W
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
NexFET™
Turn-Off Delay Time
14ns
Turn-On Delay Time
5.7ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18503KCS Datasheet
Download the complete datasheet for Texas Instruments CSD18503KCS to view detailed technical specifications.
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