N-channel NexFET™ MOSFET, single element, 60V drain-to-source breakdown voltage, 3.2mOhm Rds On Max. Features 100A continuous drain current, 156W max power dissipation, and 3.3mR drain-to-source resistance. Operates from -55°C to 150°C, with a 1.8V threshold voltage. Packaged in a SON5x6 surface-mount package with tin, matte contact plating.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD18532Q5B technical specifications.
General
Package/Case
SON
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
3.1ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.07nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.2W
Rds On Max
3.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.8V
Turn-Off Delay Time
22ns
Turn-On Delay Time
5.8ns
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18532Q5B Datasheet
Download the complete datasheet for Texas Instruments CSD18532Q5B to view detailed technical specifications.
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