N-channel NexFET™ MOSFET, single element, 60V drain-to-source breakdown voltage, 3.2mOhm Rds On Max. Features 100A continuous drain current, 156W max power dissipation, and 3.3mR drain-to-source resistance. Operates from -55°C to 150°C, with a 1.8V threshold voltage. Packaged in a SON5x6 surface-mount package with tin, matte contact plating.
PackageSON
MountingSurface Mount
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Texas Instruments CSD18532Q5B technical specifications.
General
| Package/Case | SON |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 3.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.07nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| Rds On Max | 3.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | NexFET™ |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 5.8ns |
Compliance
| RoHS | Compliant |
Datasheet
Texas Instruments CSD18532Q5B Datasheet
Download the complete datasheet for Texas Instruments CSD18532Q5B to view detailed technical specifications.
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