60V N-channel NexFET™ MOSFET in a TO-220 package. Features low 6.3mΩ Rds(on) at 10Vgs, 100A continuous drain current, and 192W max power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. This single element MOSFET offers fast switching speeds with a 5.7ns turn-on delay and 3.2ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Texas Instruments CSD18533KCS technical specifications.
General
Package/Case
TO-220
Contact Plating
Tin
Continuous Drain Current (ID)
100A
Drain to Source Resistance
6.9mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Single
Fall Time
3.2ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
3.025nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
192W
Mount
Through Hole
Nominal Vgs
1.9V
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Rds On Max
6.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
NexFET™
Threshold Voltage
1.9V
Turn-Off Delay Time
13ns
Turn-On Delay Time
5.7ns
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Texas Instruments CSD18533KCS Datasheet
Download the complete datasheet for Texas Instruments CSD18533KCS to view detailed technical specifications.
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