N-channel NexFET™ MOSFET, 100V drain-source voltage, 14.5mOhm on-resistance at 8V gate-source voltage. Single element, 5-terminal device with dual terminal positioning. Encased in a SON3x3 package, operating temperature range of -55 to 150°C.
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Technical Specifications
Texas Instruments CSD19537Q3 technical specifications.
General
Number of Terminals
5
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
Lead Free
Yes
REACH
not_compliant
Military Spec
False
Datasheet
Texas Instruments CSD19537Q3 Datasheet
Download the complete datasheet for Texas Instruments CSD19537Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.